Specification	HUF75321D3ST

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44 nC
Input Capacitance (Ciss) (Max) @ Vds	680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	93 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

HUF75321D3ST Series

N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ

Part	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
ON Semiconductor HUF75321P3	TO-220-3	55 V	34 mOhm	N-Channel	20 V	4 V	-55 °C	175 ░C	93 W	680 pF	44 nC	Through Hole	MOSFET (Metal Oxide)	35 A	10 V	TO-220-3
ON Semiconductor HUF75321D3ST	DPAK (2 Leads + Tab) SC-63 TO-252-3	55 V	36 mOhm	N-Channel	20 V	4 V	-55 °C	175 ░C	93 W	680 pF	44 nC	Surface Mount	MOSFET (Metal Oxide)	20 A	10 V	TO-252AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.04
		10	$ 0.66
		100	$ 0.44
		500	$ 0.34
	Digi-Reel®	1	$ 1.04
		10	$ 0.66
		100	$ 0.44
		500	$ 0.34
	Tape & Reel (TR)	2500	$ 0.34
Newark	Each (Supplied on Full Reel)	1	$ 0.47
		3000	$ 0.45
		6000	$ 0.41
		12000	$ 0.37
		18000	$ 0.36
		30000	$ 0.35
ON Semiconductor	N/A	1	$ 0.37

Description

General part information

HUF75321D3ST Series

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.