
Discrete Semiconductor Products
FDD8647L
ObsoleteON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40 V, 42 A, 9 MΩ
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Discrete Semiconductor Products
FDD8647L
ObsoleteON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40 V, 42 A, 9 MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDD8647L |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14 A, 42 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 28 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 3.1 W, 43 W |
| Rds On (Max) @ Id, Vgs | 9 mOhm |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FDD8647L Series
This N-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low rDS(on)and optimized BVDSScapability to offer superior performance benefit in the application.
Documents
Technical documentation and resources