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TO-252AA
Discrete Semiconductor Products

FDD8647L

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40 V, 42 A, 9 MΩ

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TO-252AA
Discrete Semiconductor Products

FDD8647L

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40 V, 42 A, 9 MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD8647L
Current - Continuous Drain (Id) @ 25°C14 A, 42 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]28 nC
Input Capacitance (Ciss) (Max) @ Vds1640 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)3.1 W, 43 W
Rds On (Max) @ Id, Vgs9 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.91
10$ 1.22
100$ 0.82
500$ 0.65
1000$ 0.60
Digi-Reel® 1$ 1.96
10$ 1.25
100$ 0.85
500$ 0.67
1000$ 0.61
Tape & Reel (TR) 2500$ 0.54
5000$ 0.51
7500$ 0.51
NewarkEach (Supplied on Full Reel) 2500$ 0.86
5000$ 0.84

Description

General part information

FDD8647L Series

This N-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low rDS(on)and optimized BVDSScapability to offer superior performance benefit in the application.