Specification	BUH100

Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10 hFE
Frequency - Transition	23 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-60 °C
Package / Case	TO-220-3
Power - Max [Max]	100 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	700 V

BUH100 Series

NPN Bipolar Power Transistor

Part	Mounting Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor BUH100	Through Hole	100 µA	TO-220	150 °C	-60 °C	100 W	NPN	750 mV	23 MHz	10 hFE	TO-220-3	700 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BUH100 Series

This NPN Bipolar Power Transistor is specifically designed to sustain the large inrush current during either the start-up conditions or under a short circuit across the load.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing