Optoelectronics

TSHG8200

LTB

EMITTER IR 830NM 100MA RADIAL

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Optoelectronics

LTB

EMITTER IR 830NM 100MA RADIAL

Technical Specifications

Parameters and characteristics for this part

Specification	TSHG8200

Current - DC Forward (If) (Max) [Max]	100 mA
Mounting Type	Through Hole
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	T 1 3/4, Radial
Package / Case [diameter]	5 mm
Radiant Intensity (Ie) Min @ If [Min]	120 mW/sr
Type	Infrared (IR)
Viewing Angle	20 °
Voltage - Forward (Vf) (Typ)	1.5 V
Wavelength	830 nm

Part	Voltage - Forward (Vf) (Typ)	Type	Mounting Type	Current - DC Forward (If) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Viewing Angle	Wavelength	Radiant Intensity (Ie) Min @ If [Min]	Package / Case [diameter]	Package / Case	Orientation
Vishay General Semiconductor - Diodes Division TSHG8200	1.5 V	Infrared (IR)	Through Hole	100 mA	85 °C	-40 °C	20 °	830 nm	120 mW/sr	5 mm	Radial T 1 3/4	Top View

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General part information

Infrared (IR) Emitter 830nm 1.5V 100mA 120mW/sr @ 100mA 20° Radial, 5mm Dia (T 1 3/4)

Technical documentation and resources