Discrete Semiconductor Products

UPA2716AGR-E1-AT

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2716AGR-E1-AT

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.173 in
Package / Case	4.4 mm
Package / Case	8-SOIC
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	8-PSOP
Technology	MOSFET (Metal Oxide)

Switching N-Channel Power MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Technology	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Package / Case	Package / Case	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature
Renesas Electronics Corporation UPA2716AGR-E1-AT	95 nC	8-PSOP	14 A	2 W	MOSFET (Metal Oxide)	30 V	P-Channel	Surface Mount	0.173 in	4.4 mm	8-SOIC	3000 pF	7 mOhm	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	313	$ 0.96

General part information

The UPA2716AGR is a Switching N-Channel Power MOSFET.

Technical documentation and resources