Discrete Semiconductor Products

BAS29

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SMALL SIGNAL DIODE, SINGLE, 120 V, 200 MA, 1.25 V, 50 NS, 2 A

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Discrete Semiconductor Products

Active

SMALL SIGNAL DIODE, SINGLE, 120 V, 200 MA, 1.25 V, 50 NS, 2 A

Technical Specifications

Parameters and characteristics for this part

Specification	BAS29

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	50 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SOT-23-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If	1 V

General Purpose High Voltage Diode

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Speed	Speed	Mounting Type	Technology	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Supplier Device Package
ON Semiconductor BAS29	1 V	200 mA	150 °C	120 V	SC-59 SOT-23-3 TO-236-3	100 nA	Any Speed	200 mA	Surface Mount	Standard	50 ns	2 pF	SOT-23-3

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General part information

General Purpose High Voltage Diode

Technical documentation and resources