Discrete Semiconductor Products

IXTA1N100P

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MOSFET N-CH 1000V 1A TO263

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Discrete Semiconductor Products

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MOSFET N-CH 1000V 1A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA1N100P

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.5 nC
Input Capacitance (Ciss) (Max) @ Vds	331 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs [Max]	15 Ohm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
IXYS IXTA1N100P	20 V	1000 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	15.5 nC	10 V	-55 °C	150 °C	50 W	Surface Mount	331 pF	TO-263AA	15 Ohm	1 A	4.5 V
IXYS IXTA1N100	30 V	1000 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	14.5 nC	10 V	-55 °C	150 °C	54 W	Surface Mount	400 pF	TO-263AA	11 Ohm	1.5 A	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 1.43

General part information

N-Channel 1000 V 1A (Tc) 50W (Tc) Surface Mount TO-263AA

Technical documentation and resources