Discrete Semiconductor Products

UPA2751GR-E1-AT

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

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Discrete Semiconductor Products

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2751GR-E1-AT

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A, 9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1040 pF
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173", 4.40mm Width)
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	15.5 mOhm
Supplier Device Package	8-PSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Technology	Power - Max [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Configuration	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id
Renesas Electronics Corporation UPA2751GR-E1-A
Renesas Electronics Corporation UPA2751GR-E1-AT	15.5 mOhm	MOSFET (Metal Oxide)	2 W	8-PSOP	8-SOIC (0.173" 4.40mm Width)	30 V	Surface Mount	8 A 9 A	2 N-Channel (Dual)	Logic Level Gate	21 nC	1040 pF	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 9A, 8A 2W Surface Mount 8-PSOP

Technical documentation and resources