Discrete Semiconductor Products

UPA2751GR-E1-AT

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2751GR-E1-AT

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A, 9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	1040 pF
Mounting Type	Surface Mount
Package / Case	0.173 in
Package / Case	4.4 mm
Package / Case	8-SOIC
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	15.5 mOhm
Supplier Device Package	8-PSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Power MOSFETs for Automotive

Part	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Configuration	Package / Case	Package / Case	Package / Case	Mounting Type	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Supplier Device Package
Renesas Electronics Corporation UPA2751GR-E1-AT	Logic Level Gate	21 nC	30 V	2 N-Channel (Dual)	0.173 in	4.4 mm	8-SOIC	Surface Mount	2 W	1040 pF	MOSFET (Metal Oxide)	15.5 mOhm	8 A 9 A	2.5 V	8-PSOP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	286	$ 1.05

General part information

Power MOSFETs for Automotive

Technical documentation and resources

No documents available