Discrete Semiconductor Products

IRFP440PBF

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MOSFET N-CH 500V 8.8A TO247-3

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Discrete Semiconductor Products

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MOSFET N-CH 500V 8.8A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP440PBF

Current - Continuous Drain (Id) @ 25°C	8.8 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	850 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division IRFP440PBF	N-Channel	63 nC	TO-247AC	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	1300 pF	150 W	8.8 A	850 mOhm	Through Hole	500 V	TO-247-3	10 V	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 8.8A (Tc) 150W (Tc) Through Hole TO-247AC

Technical documentation and resources

No documents available