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SOT-363
Discrete Semiconductor Products

MUN5131DW1T1G

Active
ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, DUAL PNP, 50 V, 100 MA

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SOT-363
Discrete Semiconductor Products

MUN5131DW1T1G

Active
ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, DUAL PNP, 50 V, 100 MA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMUN5131DW1T1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce8 hFE
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]250 mW
Resistor - Base (R1)2.2 kOhm
Resistor - Emitter Base (R2)2.2 kOhms
Supplier Device PackageSC70-6, SC-88, SOT-363
Transistor Type2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.26
Digi-Reel® 1$ 0.26
Tape & Reel (TR) 3000$ 0.05
6000$ 0.05
9000$ 0.04
15000$ 0.04
21000$ 0.04
30000$ 0.04
75000$ 0.03
150000$ 0.03
300000$ 0.03
NewarkEach (Supplied on Cut Tape) 2500$ 0.06
ON SemiconductorN/A 1$ 0.03

Description

General part information

MUN5131DW1 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.