Specification	MCH6344-TL-H

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.9 nC
Input Capacitance (Ciss) (Max) @ Vds	172 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	6-MCPH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

MCH6344 Series

Single P-Channel Power MOSFET, -30V, -2A, 150mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor MCH6344-TL-H	3.9 nC	150 mOhm	30 V	6-SMD Flat Leads	2 A	Surface Mount	P-Channel	172 pF	20 V	150 °C	MOSFET (Metal Oxide)	6-MCPH	4 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MCH6344 Series

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.