Discrete Semiconductor Products

NTZS3151PT1G

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TRANS MOSFET P-CH 20V 0.86A 6-PIN SOT-563 T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET P-CH 20V 0.86A 6-PIN SOT-563 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	NTZS3151PT1G

Current - Continuous Drain (Id) @ 25°C	860 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.6 nC
Input Capacitance (Ciss) (Max) @ Vds	458 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max)	170 mW
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor NTZS3151PT1G	MOSFET (Metal Oxide)	5.6 nC	P-Channel	SOT-563	170 mW	Surface Mount	SOT-563 SOT-666	860 mA	1.8 V 4.5 V	1 V	20 V	458 pF	-55 °C	150 °C	150 mOhm	8 V
ON Semiconductor NTZS3151PT5G	MOSFET (Metal Oxide)	5.6 nC	P-Channel	SOT-563	170 mW	Surface Mount	SOT-563 SOT-666	860 mA	1.8 V 4.5 V	1 V	20 V	458 pF	-55 °C	150 °C	150 mOhm	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Low RDS(on)Improving System Effciency

Low Threshold Voltage

Small Footprint 1.6 x 1.6 mm

Technical documentation and resources