Discrete Semiconductor Products
RQ6E045RPTR
ActiveRohm Semiconductor
MOSFET, P-CH, -30V, -4.5A, 150DEG C
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Discrete Semiconductor Products
RQ6E045RPTR
ActiveRohm Semiconductor
MOSFET, P-CH, -30V, -4.5A, 150DEG C
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ6E045RPTR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 14 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Power Dissipation (Max) | 950 mW |
| Rds On (Max) @ Id, Vgs | 35 mOhm |
| Supplier Device Package | TSMT6 (SC-95) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ6E045RP Series
RQ6E045RP is the low on - resistance MOSFET, built-in G-S protection diode for switching application.
Documents
Technical documentation and resources