Discrete Semiconductor Products

LVE2560E-M3/P

Active

BRIDGE RECT 1P 600V 4A GSIB-5S

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

BRIDGE RECT 1P 600V 4A GSIB-5S

Technical Specifications

Parameters and characteristics for this part

Specification	LVE2560E-M3/P

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GSIB-5S, 4-SIP
Supplier Device Package	GSIB-5S
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	920 mV
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Current - Reverse Leakage @ Vr	Operating Temperature [Min]	Operating Temperature [Max]	Diode Type	Mounting Type	Current - Average Rectified (Io)	Voltage - Peak Reverse (Max) [Max]	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology
Vishay General Semiconductor - Diodes Division LVE2560E-M3/P	10 µA	-55 °C	150 °C	Single Phase	Through Hole	4 A	600 V	4-SIP GSIB-5S	GSIB-5S	920 mV	Standard
Vishay General Semiconductor - Diodes Division LVE2560-M3/P	10 µA	-55 °C	150 °C	Single Phase	Through Hole	3.5 A	600 V	4-SIP GSIB-5S	GSIB-5S	920 mV	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole GSIB-5S

Technical documentation and resources