Specification	FQN1N60CTA

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds	170 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	1 W, 3 W
Rds On (Max) @ Id, Vgs	11.5 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQN1N60C Series

Power MOSFET, N-Channel, QFET®, 600 V, 0.3 A, 11.5 Ω, TO-92

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQN1N60CTA	170 pF	300 mA	-55 °C	150 °C	TO-226-3 TO-92-3	Through Hole	4 V	600 V	30 V	1 W 3 W	TO-92-3	11.5 Ohm	MOSFET (Metal Oxide)	10 V	N-Channel	6.2 nC
ON Semiconductor FQN1N60CTA	170 pF	300 mA	-55 °C	150 °C	TO-226-3 TO-92-3	Through Hole	4 V	600 V	30 V	1 W 3 W	TO-92-3	11.5 Ohm	MOSFET (Metal Oxide)	10 V	N-Channel	6.2 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 0.20
		10	$ 0.19
		25	$ 0.19
		50	$ 0.19
		100	$ 0.18
		250	$ 0.18
Digikey	Bulk	1461	$ 0.21
		1461	$ 0.21
	Cut Tape (CT)	1	$ 0.89
		1	$ 0.89
		10	$ 0.55
		10	$ 0.55
		100	$ 0.36
		100	$ 0.36
		500	$ 0.28
		500	$ 0.28
		1000	$ 0.25
		1000	$ 0.25
	Tape & Box (TB)	2000	$ 0.23
		2000	$ 0.23
		4000	$ 0.21
		4000	$ 0.21
		6000	$ 0.20
		6000	$ 0.20
		10000	$ 0.19
		10000	$ 0.19
		14000	$ 0.18
		14000	$ 0.18
		20000	$ 0.17
		20000	$ 0.17
		50000	$ 0.17
		50000	$ 0.17

Description

General part information

FQN1N60C Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.