Specification	FQU8P10TU

Current - Continuous Drain (Id) @ 25°C	6.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	2.5 W, 44 W
Rds On (Max) @ Id, Vgs	530 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQU8P10 Series

Power MOSFET, P-Channel, QFET®, -100 V, -6.6 A, 530 mΩ, IPAK

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Package / Case	Technology
ON Semiconductor FQU8P10TU	100 V	IPAK	470 pF	530 mOhm	10 V	-55 °C	150 °C	30 V	Through Hole	6.6 A	2.5 W 44 W	4 V	P-Channel	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	745	$ 0.40

Description

General part information

FQU8P10 Series

This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.