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DCG010-TL-E
Discrete Semiconductor Products

BC848AWT1G

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ON Semiconductor

SMALL SIGNAL BIPOLAR TRANSISTOR

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DCG010-TL-E
Discrete Semiconductor Products

BC848AWT1G

Active
ON Semiconductor

SMALL SIGNAL BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationBC848AWT1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]110
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power - Max [Max]150 mW
Supplier Device PackageSC-70 (SOT323)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 11539$ 0.03

Description

General part information

BC848AW Series

The NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package, which is designed for low power surface mount applications.