Discrete Semiconductor Products

VS-35EPF06LHM3

Active

DIODE GEN PURP 600V 35A TO247AD

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 35A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-35EPF06LHM3

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	160 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.46 V

Part	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Mounting Type	Grade	Technology	Speed	Package / Case	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]
Vishay General Semiconductor - Diodes Division VS-35EPF06LHM3	35 A	150 °C	-40 °C	160 ns	Through Hole	Automotive	Standard	200 mA 500 ns	TO-247-2	AEC-Q101	600 V	TO-247AD	100 µA	1.46 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 1.86

General part information

Diode 600 V 35A Through Hole TO-247AD

Technical documentation and resources