Discrete Semiconductor Products

PBLS6003D-QX

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PBLS6003D-Q/SOT457/SC-74

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Discrete Semiconductor Products

Active

PBLS6003D-Q/SOT457/SC-74

Technical Specifications

Parameters and characteristics for this part

Specification	PBLS6003D-QX

Current - Collector (Ic) (Max)	700 mA, 100 mA
Current - Collector Cutoff (Max)	100 nA
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE, 30
Frequency - Transition	185 MHz
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Power - Max	200 mW, 250 mW
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	6-TSOP
Transistor Type	1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic	150 mV, 340 mV
Voltage - Collector Emitter Breakdown (Max)	50 V, 60 V

Part	Frequency - Transition	Package / Case	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max)	Mounting Type	Power - Max	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max)	Current - Collector Cutoff (Max)	Supplier Device Package
Freescale Semiconductor - NXP PBLS6003D-QX	185 MHz	SC-74 SOT-457	10 kOhms	100 mA 700 mA	Surface Mount	200 mW 250 mW	150 mV 340 mV	1 NPN Pre-Biased 1 PNP	50 V 60 V	30 200 hFE	100 nA	1 µA	6-TSOP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA, 700mA 185MHz 200mW, 250mW Surface Mount 6-TSOP

Technical documentation and resources

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