Discrete Semiconductor Products

IRLU120PBF

Obsolete

MOSFET N-CH 100V 7.7A TO251AA

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 7.7A TO251AA

Technical Specifications

Parameters and characteristics for this part

Specification	IRLU120PBF

Current - Continuous Drain (Id) @ 25°C	7.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	42 W, 2.5 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)
Vishay General Semiconductor - Diodes Division IRLU120PBF	N-Channel	2 V	4 V 5 V	-55 °C	150 °C	270 mOhm	TO-251AA	MOSFET (Metal Oxide)	Through Hole	2.5 W 42 W	12 nC	7.7 A	100 V	IPAK TO-251-3 Short Leads TO-251AA	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

Technical documentation and resources