Discrete Semiconductor Products

SI8413DB-T1-E1

LTB

MOSFET P-CH 20V 4.8A 4MICROFOOT

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Discrete Semiconductor Products

LTB

MOSFET P-CH 20V 4.8A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8413DB-T1-E1

Current - Continuous Drain (Id) (Ta)	4.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	21 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	1.47 W
Rds On (Max)	48 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.4 V

Part	Vgs (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Rds On (Max)	FET Type	Package Name	Package / Case	Technology
Vishay Dale SI8413DB-T1-E1	12 V	21 nC	-55 °C	150 °C	Surface Mount	2.5 V	4.5 V	1.47 W	4.8 A	20 V	1.4 V	48 mOhm	P-Channel	4-Microfoot	4-XFBGA CSPBGA	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 20 V 4.8A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot

Technical documentation and resources