Discrete Semiconductor Products

SI8413DB-T1-E1

LTB

MOSFET P-CH 20V 4.8A 4MICROFOOT

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Discrete Semiconductor Products

LTB

MOSFET P-CH 20V 4.8A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8413DB-T1-E1

Current - Continuous Drain (Id) @ 25°C	4.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Power Dissipation (Max) [Max]	1.47 W
Rds On (Max) @ Id, Vgs	48 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case	Vgs(th) (Max) @ Id	Technology
Vishay General Semiconductor - Diodes Division SI8413DB-T1-E1	4-Microfoot	4.8 A	48 mOhm	21 nC	2.5 V 4.5 V	-55 °C	150 °C	12 V	Surface Mount	P-Channel	20 V	1.47 W	4-XFBGA CSPBGA	1.4 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 4.8A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot

Technical documentation and resources