Specification	FDPF33N25TRDTU

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	2135 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Formed Leads
Power Dissipation (Max) [Max]	37 W
Rds On (Max) @ Id, Vgs	94 mOhm
Supplier Device Package	TO-220F (LG-Formed)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDPF33N25TRDTU Series

Power MOSFET, N-Channel, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220F

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	FET Type	Power Dissipation (Max) [Max]
ON Semiconductor FDPF33N25TRDTU	-55 °C	150 °C	TO-220-3 Full Pack Formed Leads	TO-220F (LG-Formed)	33 A	Through Hole	2135 pF	30 V	48 nC	10 V	94 mOhm	5 V	250 V	MOSFET (Metal Oxide)	N-Channel	37 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDPF33N25TRDTU Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.