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40-VQFN Exposed pad
Integrated Circuits (ICs)

TPS65177ARHAR

Active
Texas Instruments

FULLY I2C PROGRAMMABLE 6-CH LCD BIAS IC FOR ALL SIZE TV INCLUDING GATE

40-VQFN Exposed pad
Integrated Circuits (ICs)

TPS65177ARHAR

Active
Texas Instruments

FULLY I2C PROGRAMMABLE 6-CH LCD BIAS IC FOR ALL SIZE TV INCLUDING GATE

Technical Specifications

Parameters and characteristics for this part

SpecificationTPS65177ARHAR
ApplicationsLCD TV/Monitor
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case40-VFQFN Exposed Pad
Supplier Device Package40-VQFN (6x6)
Voltage - Supply [Max]14.7 V
Voltage - Supply [Min]8.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.33
10$ 1.19
25$ 1.13
100$ 0.93
250$ 0.87
500$ 0.77
1000$ 0.61
Digi-Reel® 1$ 1.33
10$ 1.19
25$ 1.13
100$ 0.93
250$ 0.87
500$ 0.77
1000$ 0.61
Tape & Reel (TR) 2500$ 0.57
5000$ 0.54
12500$ 0.52
Texas InstrumentsLARGE T&R 1$ 0.99
100$ 0.76
250$ 0.56
1000$ 0.40

Description

General part information

TPS65177A Series

The TPS65177/A provides all supply rails needed by a GIP (Gate-in-Panel) or non-GIP TFT-LCD panel. All output voltages are I2C programmable.

V(IO)and V(CORE)for the T-CON, V(AVDD)and V(HAVDD)for the Source Driver and the Gamma Buffer, V(GH)and V(GL)for the Gate Driver or the Level Shifter. For use with non-GIP technology Gate Pulse Modulation (GPM) is implemented, for use with GIP technology the V(GH)rail can be temperature compensated. Furthermore a High Voltage Stress Mode (HVS) for V(AVDD)and V(HAVDD)and an integrated V(AVDD)Isolation Switch is implemented. V(CORE), V(HAVDD), V(GH), V(GL), GPM and the V(GH)temperature compensation can be enabled and disabled by I2C programming.

A single BOM (Bill of Materials) can cover several panel types and sizes whose desired output voltage levels can be programmed in production and stored in a non-volatile integrated memory.