Discrete Semiconductor Products

BUK7Y25-40B/C,115

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MOSFET N-CH 40V 35.3A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 40V 35.3A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y25-40B/C,115

Current - Continuous Drain (Id) @ 25°C	35.3 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.1 nC
Input Capacitance (Ciss) (Max) @ Vds	693 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	59.4 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP BUK7Y25-40B/C,115	12.1 nC	693 pF	MOSFET (Metal Oxide)	59.4 W	10 V	N-Channel	SC-100 SOT-669	35.3 A	20 V	-55 °C	175 ░C	Surface Mount	40 V	LFPAK56 Power-SO8	25 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 35.3A (Tc) 59.4W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources