Discrete Semiconductor Products

DSR01S30SL,L3F

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DIODES, 30 V/0.1 A SCHOTTKY BARRIER DIODE, SOD-962(SL2)

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Discrete Semiconductor Products

Active

DIODES, 30 V/0.1 A SCHOTTKY BARRIER DIODE, SOD-962(SL2)

Technical Specifications

Parameters and characteristics for this part

Specification	DSR01S30SL,L3F

Capacitance @ Vr, F	8.2 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	700 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	2-SMD, No Lead
Speed	200 mA
Speed	Any Speed
Supplier Device Package	SL2
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If [Max]	620 mV

Part	Operating Temperature - Junction [Max]	Speed	Speed	Supplier Device Package	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case
Toshiba Semiconductor and Storage DSR01S30SL,L3F	125 °C	200 mA	Any Speed	SL2	8.2 pF	30 V	700 nA	Surface Mount	2-SMD No Lead	Schottky	100 mA	620 mV
Toshiba Semiconductor and Storage DSR01S30SC,L3F	125 °C	200 mA	Any Speed	SC2	8.2 pF	30 V	700 µA	Surface Mount	0201	Schottky	100 mA	620 mV	0603 Metric

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 30 V 100mA Surface Mount SL2

Technical documentation and resources