Discrete Semiconductor Products

MPSH81

Obsolete

RF TRANS PNP 20V 600MHZ TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

RF TRANS PNP 20V 600MHZ TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	MPSH81

Current - Collector (Ic) (Max) [Max]	50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60 hFE
Frequency - Transition	600 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	350 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	20 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Power - Max [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Supplier Device Package	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MPSH81_D26Z	-55 °C	150 °C	PNP	350 mW	Through Hole	60 hFE	TO-226-3 TO-92-3	20 V	600 MHz	TO-92-3	50 mA
ON Semiconductor MPSH81	-55 °C	150 °C	PNP	350 mW	Through Hole	60 hFE	TO-226-3 TO-92-3	20 V	600 MHz	TO-92-3	50 mA
ON Semiconductor MPSH81_D75Z	-55 °C	150 °C	PNP	350 mW	Through Hole	60 hFE	TO-226-3 TO-92-3	20 V	600 MHz	TO-92-3	50 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

LCSC	N/A	1	$ 0.00

General part information

RF Transistor PNP 20V 50mA 600MHz 350mW Through Hole TO-92-3

Technical documentation and resources

No documents available