Discrete Semiconductor Products

SI7413DN-T1-GE3

Obsolete

MOSFET P-CH 20V 8.4A PPAK 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 8.4A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7413DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	8.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	51 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	15 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Power Dissipation (Max)	FET Type	Vgs(th) (Max)	Package Name	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Vgs (Max)	Rds On (Max)	Technology
Vishay Dale SI7413DN-T1-E3	1.5 W	P-Channel	1 V	PowerPAK® 1212-8	PowerPAK® 1212-8	Surface Mount	20 V	8.4 A	-55 °C	150 °C	4.5 V	1.8 V	51 nC	8 V	15 mOhm	MOSFET (Metal Oxide)
Vishay Dale SI7413DN-T1-GE3	1.5 W	P-Channel	1 V	PowerPAK® 1212-8	PowerPAK® 1212-8	Surface Mount	20 V	8.4 A	-55 °C	150 °C	4.5 V	1.8 V	51 nC	8 V	15 mOhm	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	30d+

3D models and CAD resources for this part

General part information

P-Channel 20 V 8.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources