Discrete Semiconductor Products

MMBTA42_D87Z

Obsolete

TRANS NPN 300V 0.5A SOT-23-3

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Discrete Semiconductor Products

Obsolete

TRANS NPN 300V 0.5A SOT-23-3

Technical Specifications

Parameters and characteristics for this part

Specification	MMBTA42_D87Z

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	50 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	240 mW
Supplier Device Package	SOT-23-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

NPN Bipolar Small Signal Transistor

Part	Package / Case	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package
ON Semiconductor MMBTA42_D87Z	SC-59 SOT-23-3 TO-236-3	NPN	-55 °C	150 °C	240 mW	500 mV	300 V	50 MHz	100 nA	Surface Mount	40	500 mA	SOT-23-3
ON Semiconductor MMBTA42	SC-59 SOT-23-3 TO-236-3	NPN	-55 °C	150 °C	240 mW	500 mV	300 V	50 MHz	100 nA	Surface Mount	40	500 mA	SOT-23-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This High Voltage NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the TO-92 package.

Technical documentation and resources