Discrete Semiconductor Products

BSP220,115

NRND

MOSFET P-CH 200V 225MA SOT223

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

MOSFET P-CH 200V 225MA SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	BSP220,115

Current - Continuous Drain (Id) @ 25°C	225 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	90 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.8 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Operating Temperature	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology
Freescale Semiconductor - NXP BSP220,115	10 V	225 mA	TO-261-4 TO-261AA	P-Channel	1.5 W	2.8 V	150 °C	200 V	90 pF	Surface Mount	20 V	SOT-223	12 Ohm	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 200 V 225mA (Ta) 1.5W (Ta) Surface Mount SOT-223

Technical documentation and resources