Specification	DMT61M5SPSW-13

Current - Continuous Drain (Id) @ 25°C	215 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	130.6 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.7 W, 139 W
Rds On (Max) @ Id, Vgs	1.5 mOhm
Supplier Device Package	PowerDI5060-8 (SWP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

DMT61M5SPSW Series

60V N-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMT61M5SPSW-13	130.6 nC	N-Channel	MOSFET (Metal Oxide)	PowerDI5060-8 (SWP)	4 V	Surface Mount	2.7 W 139 W	1.5 mOhm	8-PowerTDFN	10 V	60 V	215 A	20 V	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.82
		10	$ 1.51
		100	$ 1.20
		500	$ 1.02
		1000	$ 0.86
	Digi-Reel®	1	$ 1.82
		10	$ 1.51
		100	$ 1.20
		500	$ 1.02
		1000	$ 0.86
	Tape & Reel (TR)	2500	$ 0.82
		5000	$ 0.79
		12500	$ 0.79

Description

General part information

DMT61M5SPSW Series

This new generation N-Channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.