Specification	ECH8695R-TL-W

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	24 V
FET Feature	Logic Level Gate
FET Feature	2.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	9.1 mOhm
Supplier Device Package	SOT-28FL/ECH8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

ECH8695R Series

Dual N-Channel Power MOSFET for 1-2 Cells Lithium-ion Battery Protection, 24V, 11 A, 9.1 mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Power - Max [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	FET Feature	Rds On (Max) @ Id, Vgs	Configuration
ON Semiconductor ECH8695R-TL-W	11 A	Surface Mount	24 V	1.4 W	1.3 V	SOT-28FL/ECH8	MOSFET (Metal Oxide)	150 °C	10 nC	Logic Level Gate	2.5 V	9.1 mOhm	2 N-Channel (Dual) Common Drain

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.75
		10	$ 0.65
		100	$ 0.45
		500	$ 0.38
		1000	$ 0.32
	Digi-Reel®	1	$ 0.75
		10	$ 0.65
		100	$ 0.45
		500	$ 0.38
		1000	$ 0.32
	Tape & Reel (TR)	3000	$ 0.28
		6000	$ 0.27
		9000	$ 0.25
		15000	$ 0.26
		30000	$ 0.25
Newark	Each (Supplied on Cut Tape)	1	$ 0.95
		10	$ 0.81
		25	$ 0.81
		50	$ 0.70
		100	$ 0.60
		250	$ 0.60
		500	$ 0.52
ON Semiconductor	N/A	1	$ 0.26

Description

General part information

ECH8695R Series

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells Lithium-ion Battery applications.