Isolators

TLP620-4(HITACHI,F

Obsolete

PHOTOCOUPLER

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Isolators

Obsolete

PHOTOCOUPLER

Technical Specifications

Parameters and characteristics for this part

Specification	TLP620-4(HITACHI,F

Current - DC Forward (If) (Max) [Max]	50 mA
Current - Output / Channel [custom]	50 mA
Current Transfer Ratio (Max) [Max]	600 %
Current Transfer Ratio (Min)	50 %
Mounting Type	Through Hole
Number of Channels [custom]	4
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 C
Output Type	Transistor
Package / Case	16-DIP
Package / Case [x]	0.3 in
Package / Case [x]	7.62 mm
Rise / Fall Time (Typ)	2 µs, 3 µs
Supplier Device Package	16-DIP
Turn On / Turn Off Time (Typ)	3 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.15 V
Voltage - Output (Max) [Max]	55 V

Part	Output Type	Package / Case	Current - Output / Channel [custom]	Rise / Fall Time (Typ)	Voltage - Output (Max) [Max]	Current Transfer Ratio (Max) [Max]	Current Transfer Ratio (Min)	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) [Max]	Voltage - Forward (Vf) (Typ)	Mounting Type	Current - DC Forward (If) (Max) [Max]	Turn On / Turn Off Time (Typ)	Number of Channels	Supplier Device Package	Current Transfer Ratio (Min) [Min]	Number of Channels [custom]	Package / Case [x]	Package / Case [x]
Toshiba Semiconductor and Storage TLP620-2(GR,F)	Transistor	8-DIP (0.300" 7.62mm)	50 mA	2 µs 3 µs	55 V	600 %	50 %	100 °C	-55 C	400 mV	1.15 V	Through Hole	50 mA	3 µs	2	8-DIP
Toshiba Semiconductor and Storage TLP620-2(GB-TP1,F)	Transistor		50 mA	2 µs 3 µs	55 V	600 %		100 °C	-55 C	400 mV	1.15 V	Surface Mount	50 mA	3 µs	2	8-SMD	100 %
Toshiba Semiconductor and Storage TLP620-2(D4-GB,F)	Transistor	8-DIP (0.300" 7.62mm)	50 mA	2 µs 3 µs	55 V	600 %		100 °C	-55 C	400 mV	1.15 V	Through Hole	50 mA	3 µs	2	8-DIP	100 %
Toshiba Semiconductor and Storage TLP620-2(LF1,F)	Transistor		50 mA	2 µs 3 µs	55 V	600 %	50 %	100 °C	-55 C	400 mV	1.15 V	Surface Mount	50 mA	3 µs	2	8-SMD
Toshiba Semiconductor and Storage TLP620-4(D4-LF1,F)	Transistor	16-SMD	50 mA	2 µs 3 µs	55 V	600 %	50 %	100 °C	-55 C	400 mV	1.15 V	Surface Mount	50 mA	3 µs		16-SMD		4
Toshiba Semiconductor and Storage TLP620-4(HITACHI,F	Transistor	16-DIP	50 mA	2 µs 3 µs	55 V	600 %	50 %	100 °C	-55 C	400 mV	1.15 V	Through Hole	50 mA	3 µs		16-DIP		4	0.3 in	7.62 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Optoisolator Transistor Output 5000Vrms 4 Channel 16-DIP

Technical documentation and resources