Discrete Semiconductor Products

RJK1053DPB-00#J5

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NCH POWER MOSFET 100V 25A 13MOHM LFPAK56

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Discrete Semiconductor Products

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NCH POWER MOSFET 100V 25A 13MOHM LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1053DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	6160 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 100V 25A 13mohm LFPAK56

Part	Rds On (Max) @ Id, Vgs	Operating Temperature	Technology	Package / Case	Vgs (Max)	Power Dissipation (Max)	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type
Renesas Electronics Corporation RJK1053DPB-00#J5	13 mOhm	150 °C	MOSFET (Metal Oxide)	SC-100 SOT-669	20 V	65 W	N-Channel	LFPAK	43 nC	25 A	4.5 V 10 V	6160 pF	100 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources