Discrete Semiconductor Products

BUK9Y6R0-60E,115

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MOSFET N-CH 60V 100A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 60V 100A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y6R0-60E,115

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6319 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	195 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

Part	Drain to Source Voltage (Vdss)	FET Type	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	Technology	Mounting Type	Vgs(th) (Max) @ Id [Max]	Qualification	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP BUK9Y6R5-40HX	40 V	N-Channel	Automotive	-55 °C	175 ░C	29 nC	64 W	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	Surface Mount	2.15 V	AEC-Q101	20 V	6.5 mOhm	SC-100 SOT-669	70 A	4.5 V 10 V	2036 pF
Freescale Semiconductor - NXP BUK9Y6R0-60E,115	60 V	N-Channel	Automotive	-55 °C	175 ░C	39.4 nC	195 W	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	Surface Mount		AEC-Q101	10 V	5.2 mOhm	SC-100 SOT-669	100 A	5 V	6319 pF	2.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 100A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources