Discrete Semiconductor Products

HAT2210RWS-E

Obsolete

MOSFET 2N-CH 30V 7.5A 8SOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 7.5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	HAT2210RWS-E

Configuration	2 N-Channel (Dual), Schottky
Current - Continuous Drain (Id) @ 25°C	7.5 A, 8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs	11 nC, 4.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1330 pF, 630 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	22 mOhm, 24 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Technology	Vgs(th) (Max) @ Id [Max]	Operating Temperature	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power - Max [Max]	FET Feature	Configuration	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation HAT2210RWS-E	MOSFET (Metal Oxide)	2.5 V	150 °C	Surface Mount	8-SOIC	3.9 mm	0.154 in	22 mOhm 24 mOhm	8-SOP	1.5 W	4.5V Drive Logic Level Gate	2 N-Channel (Dual) Schottky	4.6 nC 11 nC	630 pF 1330 pF	30 V	7.5 A 8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 7.5A (Ta), 8A (Ta) 1.5W (Ta) Surface Mount 8-SOP

Technical documentation and resources

No documents available