Discrete Semiconductor Products

IRFNL210BTA-FP001

Obsolete

MOSFET N-CH 200V 1A TO92L

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 1A TO92L

Technical Specifications

Parameters and characteristics for this part

Specification	IRFNL210BTA-FP001

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Input Capacitance (Ciss) (Max) @ Vds	225 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	TO-92L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)
ON Semiconductor IRFNL210BTA-FP001	10 V	N-Channel	MOSFET (Metal Oxide)	TO-226-3 TO-92-3 Long Body	225 pF	-55 °C	150 °C	Through Hole	TO-92L	9.3 nC	1 A	4 V	1.5 Ohm	3.1 W	200 V	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 1A (Tc) 3.1W (Ta) Through Hole TO-92L

Technical documentation and resources