Discrete Semiconductor Products

IRF740LCPBF-BE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 400V 10A TO220AB

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Discrete Semiconductor Products

IRF740LCPBF-BE3

Active

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 400V 10A TO220AB

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF740LCPBF-BE3

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	550 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

IRF740 Series

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division IRF740APBF	4 V	TO-220AB	MOSFET (Metal Oxide)	N-Channel	30 V	400 V	550 mOhm	10 A	TO-220-3	36 nC	Through Hole	10 V	-55 °C	150 °C	125 W	1030 pF
Vishay General Semiconductor - Diodes Division IRF740LCL	4 V	I2PAK	MOSFET (Metal Oxide)	N-Channel	30 V	400 V	550 mOhm	10 A	I2PAK TO-262-3 Long Leads TO-262AA		Through Hole	10 V	-55 °C	150 °C		1100 pF	39 nC
Vishay General Semiconductor - Diodes Division IRF740	4 V	TO-220AB	MOSFET (Metal Oxide)	N-Channel	20 V	400 V	550 mOhm	10 A	TO-220-3		Through Hole	10 V	-55 °C	150 °C	125 W	1400 pF	63 nC
Vishay General Semiconductor - Diodes Division IRF740STRRPBF	4 V	TO-263 (D2PAK)	MOSFET (Metal Oxide)	N-Channel	20 V	400 V	550 mOhm	10 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		Surface Mount	10 V	-55 °C	150 °C	3.1 W 125 W	1400 pF	63 nC
Vishay General Semiconductor - Diodes Division IRF740ASTRLPBF	4 V	TO-263 (D2PAK)	MOSFET (Metal Oxide)	N-Channel	30 V	400 V	550 mOhm	10 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	36 nC	Surface Mount	10 V	-55 °C	150 °C	125 W	1030 pF
Vishay General Semiconductor - Diodes Division IRF740LCPBF	4 V	TO-220AB	MOSFET (Metal Oxide)	N-Channel	30 V	400 V	550 mOhm	10 A	TO-220-3		Through Hole	10 V	-55 °C	150 °C	125 W	1100 pF	39 nC
Vishay General Semiconductor - Diodes Division IRF740AL	4 V	I2PAK	MOSFET (Metal Oxide)	N-Channel	30 V	400 V	550 mOhm	10 A	I2PAK TO-262-3 Long Leads TO-262AA	36 nC	Through Hole	10 V	-55 °C	150 °C	3.1 W 125 W	1030 pF
Vishay General Semiconductor - Diodes Division IRF740LCPBF-BE3	4 V	TO-220AB	MOSFET (Metal Oxide)	N-Channel	30 V	400 V	550 mOhm	10 A	TO-220-3		Through Hole		-55 °C	150 °C	125 W	1100 pF	39 nC
Vishay General Semiconductor - Diodes Division IRF740AS	4 V	TO-263 (D2PAK)	MOSFET (Metal Oxide)	N-Channel	30 V	400 V	550 mOhm	10 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	36 nC	Surface Mount	10 V	-55 °C	150 °C	3.1 W 125 W	1030 pF
Vishay General Semiconductor - Diodes Division IRF740ASTRL	4 V	TO-263 (D2PAK)	MOSFET (Metal Oxide)	N-Channel	30 V	400 V	550 mOhm	10 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	36 nC	Surface Mount	10 V	-55 °C	150 °C	3.1 W 125 W	1030 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.05
		50	$ 1.62
		100	$ 1.39
		500	$ 1.36

Description

General part information

IRF740 Series

N-Channel 400 V 10A (Tc) 125W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources