Discrete Semiconductor Products

VS-ETH3007THN3

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DIODE GEN PURP 650V 30A TO220AC

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Discrete Semiconductor Products

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DIODE GEN PURP 650V 30A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-ETH3007THN3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	30 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	37 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

Part	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Qualification	Grade
Vishay General Semiconductor - Diodes Division VS-ETH3007-M3	37 ns	TO-220-2	30 A	2.1 V	650 V	200 mA 500 ns	Standard	Through Hole	TO-220AC	175 ░C	-55 C	30 µA
Vishay General Semiconductor - Diodes Division VS-ETH3007THN3	37 ns	TO-220-2	30 A	2.1 V	650 V	200 mA 500 ns	Standard	Through Hole	TO-220AC	175 ░C	-55 C	30 µA	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 30A Through Hole TO-220AC

Technical documentation and resources