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Technical Specifications
Parameters and characteristics for this part
| Specification | SP1011-04UTG |
|---|---|
| Applications | General Purpose |
| Current - Peak Pulse (10/1000µs) | 2 A |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | 6-XDFN |
| Power Line Protection | False |
| Supplier Device Package | 6-µDFN |
| Supplier Device Package [x] | 1.25 |
| Supplier Device Package [y] | 1 |
| Type | Zener |
| Unidirectional Channels [custom] | 4 |
| Voltage - Breakdown (Min) [Min] | 7 V |
| Voltage - Clamping (Max) @ Ipp [Max] | 10.2 V |
| Voltage - Reverse Standoff (Typ) | 6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.20 | |
Description
General part information
SP1011-04UTG Series
Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protection high-speed signal pins.
Documents
Technical documentation and resources