Discrete Semiconductor Products

BUK7Y25-80EX

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BUK7Y25-80E - N-CHANNEL 80 V, 25 MΩ STANDARD LEVEL MOSFET IN LFPAK56@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

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BUK7Y25-80E - N-CHANNEL 80 V, 25 MΩ STANDARD LEVEL MOSFET IN LFPAK56@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y25-80EX

Current - Continuous Drain (Id) @ 25°C	39 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	95 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Grade	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology
Freescale Semiconductor - NXP BUK7Y25-80EX	25 mOhm	95 W	-55 °C	175 ░C	AEC-Q101	1800 pF	LFPAK56 Power-SO8	80 V	N-Channel	20 V	SC-100 SOT-669	25.9 nC	Automotive	39 A	Surface Mount	10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 39A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources