Discrete Semiconductor Products

BC879,112

Obsolete

TRANS NPN DARL 80V 1A TO-92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN DARL 80V 1A TO-92-3

Technical Specifications

Parameters and characteristics for this part

Specification	BC879,112

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Supplier Device Package	TO-92-3
Vce Saturation (Max) @ Ib, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]
Freescale Semiconductor - NXP BC879,112	50 nA	TO-92-3	2000	Through Hole	TO-226-3 TO-92-3	1 A	200 MHz	1.8 V	150 °C	80 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN - Darlington 80 V 1 A 200MHz 830 mW Through Hole TO-92-3

Technical documentation and resources