Discrete Semiconductor Products

MURH10060R

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DIODE GP REV 600V 100A D-67

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Discrete Semiconductor Products

Active

DIODE GP REV 600V 100A D-67

Technical Specifications

Parameters and characteristics for this part

Specification	MURH10060R

Current - Average Rectified (Io)	100 A
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Chassis Mount
Package / Case	D-67
Reverse Recovery Time (trr)	110 ns
Speed	500 ns, 200 mA
Supplier Device Package	D-67
Technology	Reverse Polarity, Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Speed	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
GeneSiC Semiconductor MURH10060R	110 ns	D-67	D-67	Chassis Mount	1.7 V	Reverse Polarity Standard	200 mA 500 ns	25 µA	600 V	100 A

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General part information

Diode 600 V 100A Chassis Mount D-67

Technical documentation and resources