Discrete Semiconductor Products

BUK9K52-60E,115

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MOSFET 2N-CH 60V 16A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 16A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9K52-60E,115

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	725 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	32 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	49 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Grade	FET Feature	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Configuration	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology
Freescale Semiconductor - NXP BUK9K52-60E,115	Automotive	Logic Level Gate	LFPAK56D	725 pF	AEC-Q101	2 N-Channel (Dual)	Surface Mount	49 mOhm	8-LFPAK56 SOT-1205	-55 °C	175 ░C	2.1 V	10 nC	32 W	16 A	60 V	MOSFET (Metal Oxide)

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General part information

Mosfet Array 60V 16A 32W Surface Mount LFPAK56D

Technical documentation and resources