Discrete Semiconductor Products

RJK5035DPP-A0#T2

Active

NCH POWER MOSFET 500V 10A 850MOHM TO-220F

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

NCH POWER MOSFET 500V 10A 850MOHM TO-220F

Technical Specifications

Parameters and characteristics for this part

Specification	RJK5035DPP-A0#T2

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	29 W
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Operating Temperature	Vgs (Max)	Technology	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation RJK5035DPP-A0#T2	150 °C	30 V	MOSFET (Metal Oxide)	TO-220FP	29 W	5 A	10 V	600 V	Through Hole	1.6 Ohm	TO-220-3 Full Pack	N-Channel	19 nC	600 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources