SE12DJ-M3/I

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DIODE SWITCHING 600V 12A 3-PIN(2+TAB) SMPD T/R

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Discrete Semiconductor Products

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DIODE SWITCHING 600V 12A 3-PIN(2+TAB) SMPD T/R

Technical Specifications

Parameters and characteristics for this part

Specification	SE12DJ-M3/I

Capacitance @ Vr, F	90 pF
Current - Average Rectified (Io)	3.2 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), Variant, TO-263-3
Reverse Recovery Time (trr)	3 çs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-263AC (SMPD)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Package / Case	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Mounting Type	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Grade	Qualification
Vishay General Semiconductor - Diodes Division SE12DJ-M3/I	175 ░C	-55 C	3.2 A	D2PAK (2 Leads + Tab) TO-263-3 Variant	Standard Recovery >500ns	200 mA	600 V	90 pF	Standard	20 µA	TO-263AC (SMPD)	Surface Mount	3 çs	1.15 V
Vishay General Semiconductor - Diodes Division SE12DGHM3/I	175 ░C	-55 C	3.2 A	D2PAK (2 Leads + Tab) TO-263-3 Variant	Standard Recovery >500ns	200 mA	400 V	90 pF	Standard	20 µA	TO-263AC (SMPD)	Surface Mount	3 çs	1.15 V	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 3.2A Surface Mount TO-263AC (SMPD)

Technical documentation and resources