Discrete Semiconductor Products

SI3401AHE3-TP

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P-CHANNEL MOSFET,SOT-23

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Discrete Semiconductor Products

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P-CHANNEL MOSFET,SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification	SI3401AHE3-TP

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.3 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Grade	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max) [Max]	Technology	Mounting Type
Micro Commercial Components SI3401AHE3-TP	10 V	2.5 V	P-Channel	1.3 V	30 V	12 V	4.4 A	-55 °C	150 °C	AEC-Q101	1050 pF	Automotive	SOT-23	60 mOhm	SC-59 SOT-23-3 TO-236-3	1.2 W	MOSFET (Metal Oxide)	Surface Mount
Micro Commercial Components SI3401-TP	10 V	2.5 V	P-Channel	1.3 V	30 V	12 V	4.2 A	-55 °C	150 °C		954 pF		SOT-23	65 mOhm	SC-59 SOT-23-3 TO-236-3	1.3 W	MOSFET (Metal Oxide)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 4.4A 1.2W Surface Mount SOT-23

Technical documentation and resources