Discrete Semiconductor Products

SIHG150N60E-GE3

Active

E SERIES POWER MOSFET TO-247AC,

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

E SERIES POWER MOSFET TO-247AC,

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG150N60E-GE3

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1514 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	179 W
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	FET Type	Mounting Type	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHG150N60E-GE3	MOSFET (Metal Oxide)	10 V	22 A	30 V	36 nC	600 V	TO-247AC	TO-247-3	-55 °C	150 °C	1514 pF	179 W	N-Channel	Through Hole	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 22A (Tc) 179W (Tc) Through Hole TO-247AC

Technical documentation and resources