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SOT23
Discrete Semiconductor Products

PMV16XNR

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Nexperia USA Inc.

20 V, N-CHANNEL TRENCH MOSFET

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SOT23
Discrete Semiconductor Products

PMV16XNR

Active
Nexperia USA Inc.

20 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV16XNR
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.2 nC
Input Capacitance (Ciss) (Max) @ Vds1240 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)6.94 W
Power Dissipation (Max)510 mW
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.38
10$ 0.29
100$ 0.18
500$ 0.16
1000$ 0.11
Digi-Reel® 1$ 0.38
10$ 0.29
100$ 0.18
500$ 0.16
1000$ 0.11
N/A 2216$ 0.61
Tape & Reel (TR) 3000$ 0.10
6000$ 0.10
9000$ 0.09
30000$ 0.09
75000$ 0.08

Description

General part information

PMV16XN Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.