Discrete Semiconductor Products

PMZB350UPE,315

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MOSFET P-CH 20V 1A DFN1006B-3

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Discrete Semiconductor Products

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MOSFET P-CH 20V 1A DFN1006B-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZB350UPE,315

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	127 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	3.125 W, 360 mW
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	DFN1006B-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP PMZB350UPE,315	-55 °C	150 °C	MOSFET (Metal Oxide)	DFN1006B-3	1.8 V 4.5 V	950 mV	Surface Mount	1 A	127 pF	3.125 W 360 mW	P-Channel	3-XFDFN	450 mOhm	1.9 nC	8 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount DFN1006B-3

Technical documentation and resources