Discrete Semiconductor Products

RJK0856DPB-00#J5

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NCH POWER MOSFET 80V 35A 8.9MOHM LFPAK56

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Discrete Semiconductor Products

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NCH POWER MOSFET 80V 35A 8.9MOHM LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0856DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 80V 35A 8.9mohm LFPAK56

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation RJK0856DPB-00#J5	40 nC	10 V	Surface Mount	20 V	3000 pF	150 °C	65 W	SC-100 SOT-669	8.9 mOhm	LFPAK	80 V	N-Channel	MOSFET (Metal Oxide)	35 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 1.33

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources